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OA(Outside Air) AHU¿¡¼ ûÁ¤ÈµÇ¾î ûÁ¤½Ç¿¡ °ø±ÞµÇ´Â °ø±â.
OAHU(Out Air Handing Unit) ¿ÜÁ¶±â¶ó ĪÇÏ¸ç ¿Ü±â¸¦ ÈíÀÔó¸®ÇÏ¸ç ¸Â°Ô ¼Û±âÇÑ´Ù.
Oalemce Election ¿øÀÚÇÙ µÑ·¹ÀÇ ÀüÀÚ±ºÁß ¸Ç ¹Ù±ùÂÊÀ» µ¹°í ÀÖ´Â ÀüÀÚ, ÃÖ¿Ü°¢ ÀüÀÚ¶ó°í ÇÑ´Ù.
OCD(Optically Coupled Device) ±¤°áÇÕ ÀåÄ¡.
Octal Test Probe Test½Ã touch¿¡ 8Die¸¦ ProbeinngÇÏ¸ç µ¿½Ã¿¡ 8 Die¸¦ testÇÏ´Â °ÍÀ» ¸»ÇÑ´Ù.
OEIC(Organized design for line & Crew System) Á¦Á¶SystemÀÇ ¹®Á¦Á¡À» ã¾Æ¼ ÀÛ¾÷¹æ¹ý ¹× Layout°³¼±µîÀÇ Method¸¦ ¼³°èÇÏ¿© Line¿¡ Á¤Âø ¹× ¹èÄ¡ÀοøÀÇ ÀûÁ¤È¸¦ µµ¸ðÇÏ´Â È°µ¿.
One Chip CPU ¸¶ÀÌÅ©·Î ÇÁ·Î¼¼¼ÀÇ °¡Àå °£´ÜÇÑ °ÍÀ¸·Î ¹®ÀÚ ±×´ë·Î ÇÁ·Î¼¼¼ ±â´ÉÀÌ 1°³ Chip»ó¿¡ LSIÈ µÈ °ÍÀ» ¸»ÇÑ´Ù.
ONO ±¸Á¶ CapacitorÀü±Ø»çÀÌ¿¡ µé¾î°¥ Dielectric Material·Î Oxide/ Nitride/ OxideÀÇ 3Ãþ ±¸Á¶¸¦ Çü¼ºÇÏ¿© ´ÜÃþ±¸Á¶¿¡¼ ¹ß»ýÇÒ ¼ö ÀÖ ´Â PinholeÀ» ¹æÁöÇÏ°í BreakdownƯ¼ºÀ» Çâ»ó½ÃÅ°´Â ÇÑÆí, Nitride Dielect- ric Constant°¡ Oxide¿¡ ºñÇØ ÈξÀ Å©±â ¶§¹®¿¡ Capacitance¸¦ Áõ°¡½ÃŲ´Ù.
Open ¼ÒÀÚÀÇ ³»ºÎ¿¡¼ ´Ü¼±µÈ °ÍÀ» ¸»ÇÑ´Ù.
Open Repair TFT Arrey Panel°øÁ¤¿¡¼ Data Lline¶Ç´Â Gate Line¿¡ ¼·Î ´Ù¸¥ µÎ lineÀÌ ¼·Î shortµÇ¾úÀ» ½Ã À̸¦ ²÷¾î¼ Á¤»óÀûÀ¸·Î Á¤»ó ÀÛµ¿Çϵµ·Ï ÇÏ´Â ¹æ¹ý.
Optic Emission Method Plasma°¡ etchÇÏ°íÀÚ ÇÏ´Â ¹Ú¸·°úÀÇ ¹ÝÀÀ¿¡ ÀÇÇØ ¹ß»ýµÇ´Â ¹ÝÀÀ ºÎ»ê¹°ÀÇ Optic signalÀ» ÃßÀûÇÏ´Â ¹æ¹ý.
Optical Axis º¹±¼Àý ¸ÅÁúÁß¿¡¼ ßÈÎÃàÊ(No:ordinary)°ú ì¶ßÈÎÃàÊ (Ne:extra ordinary)ÀÌ °°Àº ¼Óµµ·Î Àü´ÞµÇ¾î º¹±¼ÀýÀÌ ³ªÅ¸³»Áö ¾Ê°Ô ÇÏ´Â ¹æÇâ.
Orientation- Film(¹èÇ⸷) ¾×Á¤¹°ÁúÀ» ´Ü¼øÈ÷ À¯¸®±âÆÇ»ó¿¡ ÁÖÀÔ½ÃÅ°´Â °Í¸¸À¸·Î´Â ÀÏÁ¤ÇÑ ºÐÀÚ¹è¿À» ¾ò±â Èûµé±â ¶§¹®¿¡ Æ÷¸®À̵̹å¶õ °íºÐÀÚ¹°ÁúÀ» ÀÌ ¿ëÇÏ¿© ¹èÇ⸷À» ¸¸µë. Oscilator(¹ßÁø±â) ÀԷ½ÅÈ£°¡ ¾ø¾îµµ Ãâ·Â¿¡ °è¼ÓÇÏ¿© ÀÏÁ¤ÇÑ ÁÖÆļöÀÇ ½ÅÈ£°¡ ³ª¿À´Â ȸ·ÎÀÌ´Ù.
O/S(Open Short) °³¹æ ¹× ´Ü¶ô ºÒ·®.
OTP(One Time Programmable) ÁÖ·Î EPROM Device¸¦ Plastic Package¿¡ Á¶¸³ÇÏ¿© Erase¸¦ ¸øÇÏ´Â ´ë½Å Packageºñ¿ëÀ» ÁÙÀÌ´Â Device¸¦ ÀÏÄÂÀ½.
Output Buffer Sence AMP¿¡¼ ÁõÆøµÈ DataÀÇ External Load¸¦ DeviceÇϱâ À§ÇØ »ç¿ëµÇ´Â Buffer.
Output Level Device°¡ Ãâ·ÂÇÏ´Â ÀüÀ§·Î ÀúÀåµÈ DataÀÇ Æ¯Á¤»óÅÂ(High, Low)¸¦ ³ªÅ¸³½´Ù.
Outgassing Source Gas¸¦ ¹Ù²Ü ¶§¸¶´Ù ÀÜ·ù Gas¸¦ Á¦°ÅÇϱâ À§ÇÏ¿© °í¿·Î Å¿ö Lon Beam»ý¼ººÎ¸¦ ¼¼Á¤½ÃÄÑ ÁÖ´Â ÇüÅÂ.
Oven Wafer¸¦ ¸»¸®´Â ÀåÄ¡.
Over Coat Åõ¸íµµÀü¸·(ITO)ÀÌ ÀÖ´Â °æ¿ì ±¼°î »óÅ°¡ Ʋ·Á¼ µð½ºÇ÷¹ÀÌ¿¡ ¾ó·èÀÌ »ý±â´Â °æ¿ì Åõ¸íµµÀü¸·À» ÆÐÅÏÇÑ ÈÄ Alksli Barrir Coa t¸¦ ÇÏ¸é ¹èÇâÃþÀÇ »ý¼ºÀÌ ¿ëÀÌÇÏ´Ù.
Over Coating(Polyimide Coating) ¾×Á¤ºÐÀÚ¸¦ ÀÏÁ¤¹æÇâÀ¸·Î ¹èÇâ½ÃÅ°´Â ¹Ú¸·À¸·Î¼ ¾×Á¤ºÐÀÚÀÇ ¹èÇâÀ» ¾ÈÁ¤½ÃÅ°´Â µ¿½Ã¿¡ Åõ¸íÀü±ØÀÇ ¹Ý»ç¸¦ ÀÛ°Ô ÇÏ°í, ³»Á÷·ù¼º À» Çâ»ó½ÃÅ°´Â °ÍÀ¸·Î Æú¸®À̵̹尡 ÁÖ·Î »ç¿ëµÊ.
Over Etching End Ppint DetectionÀÇ °³³ä¿¡ Ãß°¡·Î EtchµÇ´Â °ÍÀ» ¸»ÇÔ.
Oerlay Vernier WaferÀÇ °¨±¤¾×»ó¿¡ Àü´ÞµÈ °¨±¤¿øÆÇÇü»óÀÇ Áßøµµ¸¦ ÃøÁ¤Çϱâ À§ÇÏ¿© Wafer³»¿¡ »ðÀԵǾî ÀÖ´Â PatternÁßø ÃøÁ¤¿ë ôµµ.
Over- flow ¼öÁ¶ÀÇ »óºÎ·ÎºÎÅÍ Èê·¯ ³ÑÄ¡´Â Çö»ó.
Oxidation »êȸ¦ ¸»Çϸç, È®»ê·Î¸¦ ÀÌ¿ëÇÏ¿© °í¿Â¿¡¼(650 ~ 1200 µµ) WaferÇ¥¸é¿¡ »êȸ·À» Çü¼ºÇÏ´Â °Í.
Oxide »êȸ·(SiO2)
Oxide Breakdown Oxide¸·ÀÇ Àý¿¬°µµ ÀÌ»óÀÇ voltage¿¡¼ÀÇ Àü±âÀüµµ Çö»ó.
Oxide Film(»êȸ·) ºÒ¼ø¹° È®»êÀÇ ¸¶½ºÅ©·Î¼µµ »ç¿ëµÇ¸ç ¹ÝµµÃ¼ Ç¥¸éÀÇ º¸È£¸·À¸·Îµµ »ç¿ëµÉ ¼ö ÀÖ´Â »êȸ·À¸·Î °¡Àå ¸¹ÀÌ »ç¿ëµÇ°í ÀÖ´Ù. |